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product summary drain source voltage v ds 42 v on-state resistance r ds ( on ) 200 m nominal load current i d ( nom ) 1.4 a clamping energy e a s 150 mj vps05163 1 2 3 4 application all kinds of resistive, inductive and capacitive loads in switching or linear applications c compatible power switch for 12 v dc applications replaces electromechanical relays and discrete circuits general description n channel vertical power fet in smart sipmos technology. fully protected by embedded protection functions. gate-driving unit esd overload protection over- temperature protection short circuit protection overvoltage- protection current limitation m v bb in source drain hitfet pin 1 pin 2 and 4 (tab) pin 3 features logic level input input protection (esd) thermal shutdown ? green product (rohs compliant) overload protection short circuit protection overvoltage protection current limitation analog driving possible datasheet 1 rev. 1.3, 2008-04-14 smart low side power switch hitfet bts 3110n
maximum ratings at t j = 25c, unless otherwise specified parameter symbol value unit drain source voltage v ds 42 v drain source voltage for short circuit protection t j = -40...150c v ds(sc) 18 continuous input current -0.2v v in 10v v in < -0.2v or v in > 10v i in no limit | i in | 2 ma operating temperature t j -40 ...+150 c storage temperature t stg -55 ... +150 power dissipation t c = 85 c p tot 3.8 w unclamped single pulse inductive energy 1) e a s 150 mj load dump protection v loaddump 2) = v a + v s v in = 0 and 10 v, t d = 400 ms, r i = 2 , r l = 9 , v a = 13.5 v v ld 50 v e lectro s tatic d ischarge voltage (human body model) according to mil std 883d, method 3015.7 and eos/esd assn. standard s5.1 - 1993 v esd 2 kv thermal resistance junction - ambient: @ min. footprint @ 6 cm 2 cooling area 3) r thja 125 72 k/w junction-soldering point: r thjs 17 k/w 1 not tested, specified by design. 2 v loaddump is setup without the dut connected to the generator per iso 7637-1 and din 40839 3 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb mounted vertical without blown air. datasheet 2 rev. 1.3, 2008-04-14 smart low side power switch hitfet bts 3110n
electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. characteristics drain source clamp voltage t j = - 40 ...+ 150, i d = 10 ma v ds(az) 42 - 55 v off-state drain current t j = -40 ... +150c v ds = 32 v, v in = 0 v i dss - 1.5 10 a input threshold voltage i d = 0. 3 ma, t j = 25 c i d = 0. 3 ma, t j = 150 c v in(th) 1.3 0.8 1.7 - 2.2 - v on state input current i in ( on ) - 10 30 a on-state resistance v in = 5 v, i d = 1.4 a, t j = 25 c v in = 5 v, i d = 1.4 a, t j = 150 c r ds(on) - - 190 350 240 480 m on-state resistance v in = 10 v, i d = 1.4 a, t j = 25 c v in = 10 v, i d = 1.4 a, t j = 150 c r ds(on) - - 150 280 200 400 nominal load current v ds = 0.5 v, t j < 150c, v in = 10 v, t a = 85 c i d(nom) 1.4 - - a current limit (active if v ds >2.5 v) 1) v in = 10 v, v ds = 12 v, t m = 200 s i d(lim) 5 7.5 10 1 device switched on into existing short circuit (see diagram determination of i d(lim) ). if the device is in on condi t and a short circuit occurs, these values might be exceeded for max. 50 s. datasheet 3 rev. 1.3, 2008-04-14 smart low side power switch hitfet bts 3110n
electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. dynamic characteristics turn-on time v in to 90% i d : r l = 4.7 , v in = 0 to 10 v, v bb = 12 v t on - 45 100 s turn-off time v in to 10% i d : r l = 4.7 , v in = 10 to 0 v, v bb = 12 v t off - 60 100 slew rate on 70 to 50% v bb : r l = 4.7 , v in = 0 to 10 v, v bb = 12 v -dv ds /dt on - 0.4 1.5 v/s slew rate off 50 to 70% v bb : r l = 4.7 , v in = 10 to 0 v, v bb = 12 v dv ds /dt off - 0.6 1.5 protection functions 1) thermal overload trip temperature t j t 150 175 - c input current protection mode i in ( prot ) 25 50 300 a input current protection mode t j = 150 c i in(prot) - 40 300 unclamped single pulse inductive energy 2) i d = 1.4 a, t j = 25 c, v bb = 12 v e as 150 - - mj inverse diode inverse diode forward voltage i f = 7 a, t m = 250 s, v in = 0 v, t p = 300 s v sd - 1 - v 1 integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation . 2 not tested, specified by design. datasheet 4 rev. 1.3, 2008-04-14 smart low side power switch hitfet bts 3110n
block diagram inductive and overvoltage output clamp terms hitfet in d v in i d v ds 1 i in s v bb r l 2 3 hitfet v z d s short circuit behaviour input circuit (esd protection) in t v t i in t i d t t j gate drive source/ ground input datasheet 5 rev. 1.3, 2008-04-14 smart low side power switch hitfet bts 3110n
1 maximum allowable power dissipation p tot = f(t s ) resp. p tot = f(t a ) @ r thja =72 k/w -75 -50 -25 0 25 50 75 100 c 150 t s ; t a 0 1 2 3 4 5 6 7 8 w 10 p tot 6cm2 max. 2 on-state resistance r on = f(t j ); i d =1.4a; v in =10v -50 -25 0 25 50 75 100 125 c 175 t j 0 50 100 150 200 250 300 350 400 m 500 r ds(on) typ. max. 3 on-state resistance r on = f(t j ); i d = 1.4a; v in =5v -50 -25 0 25 50 75 100 125 c 175 t j 0 50 100 150 200 250 300 350 400 m 500 r ds(on) typ. max. 4 typ. input threshold voltage v in(th) = f(t j ) ; i d = 0.15 ma; v ds = 12v -50 -25 0 25 50 75 100 c 150 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v 2 v gs(th) datasheet 6 rev. 1.3, 2008-04-14 smart low side power switch hitfet bts 3110n
5 typ. transfer characteristics i d =f(v in ); v ds =12v; t jstart =25c 0 1 2 3 4 5 6 7 8 v 10 v in 0 1 2 3 4 5 6 a 8 i d 6 typ. short circuit current i d(lim) = f(t j ); v ds =12v parameter: v in -50 -25 0 25 50 75 100 125 c 175 t j 0 1 2 3 4 5 6 7 8 a 10 i d(lim) 5v vin=10 v 7 typ. output characteristics i d =f(v ds ); t jstart =25c parameter: v in 0 1 2 3 4 v 6 v ds 0 1 2 3 4 5 6 7 8 a 10 i d 3v 4v 5v 6v 7v vin=10v 8 typ. off-state drain current i dss = f( t j ) -50 -25 0 25 50 75 100 125 c 175 t j 0 1 2 3 4 5 6 7 8 9 a 11 i dss typ. max. datasheet 7 rev. 1.3, 2008-04-14 smart low side power switch hitfet bts 3110n
9 typ. overload current i d(lim) = f( t ) , v bb =12 v, no heatsink parameter: t jstart 0 0.5 1 1.5 2 2.5 3 ms 4 t 0 2 4 6 8 a 12 i d(lim) -40c 25c 85c 150c 10 typ. transient thermal impedance z thja =f( t p ) @ 6 cm 2 cooling area parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w z thja single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 11 determination of i d(lim) i d(lim) = f( t ); t m = 200s parameter: t jstart 0 0.1 0.2 0.3 0.4 ms 0.55 t 0 2 4 6 8 a 12 i d(lim) -40c 25c 85c 150c datasheet 8 rev. 1.3, 2008-04-14 smart low side power switch hitfet bts 3110n
datasheet 9 rev. 1.3, 2008-04-14 smart low side power switch hitfet bts 3110n package outlines 1 package outlines gps05560 12 3 3 4 ?.1 0.0 4 0.5 min. 0.28 0.1 max. 15? max. 6.5 ?.2 a 4.6 2.3 0.7 ?.1 0.25 m a 1.6 ?.1 7 ?.3 b 0.25 m ?.2 3.5 b 0...10? figure 1 pg-sot223-4 (plastic green small outline transistor package) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-fre e soldering according to ipc/jedec j-std-020). please specify the package needed (e.g. green package) when placing an order you can find all of our packages, so rts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . dimensions in mm
datasheet 10 rev. 1.3, 2008-04-14 smart low side power switch hitfet bts 3110n revision history 2 revision history version date changes rev. 1.3 2008-04-14 package information updated to sot223-4 rev. 1.2 2007-03-28 released automotive green version package parameter (humidity and climatic) removed in maximum ratings aec icon added rohs icon added green product (rohs-compliant) added to the feature list package information updated to green green explanation added rev. 1.1 2004-02-02 released production version
edition 2008-04-14 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2008. all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the app lication of the device, infi neon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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